Photoelectrical and Photovoltaic Peroperties of n-ZnO/p-Si Heterojunction

Abstract:

n-ZnO thin films doped In with 2 atm.% were deposited on p-type silicon wafer with textured surface by Ion Beam Enhanced Deposition method, after annealing and prepared front and back electrodes, the n-ZnO/p-Si heterojunction samples were fabricated. The photoelectric property of the sample were measured and compared with silicon solar cell. The result indicated the saturated photocurrent of n-ZnO/p-Si heterojunction was 20% greater than one of the Si solar cell. It means the ZnO/Si heterojunction has a higher ability of produce photoelectron then one of silicon solarcell. The result of the photovoltaic test of n-ZnO/p-Si heterojunction show The open circuit voltage and short-circuit current of the n-ZnO/p-Si heterojunction was 400mV and 5.5mA/cm2 respectively. It was much smaller than the one of silicon solar cells. The reason was discussed

• Periodical: Advanced Materials Research (Volumes 399-401)
• Pages: 1477-1480
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.399-401.1477
• Online since: November 2011
• Authors: Yan Li Xu, Jin Hua Li
• Keywords: n-ZnO/p-Si Heterojunction, Solar Cell, ZnO Film

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