Stability of the Vanadium Oxide Films Forme by Reactive Sputtering and Ion Beam Enhanced Deposition Methods

Chang Liu; Mei Ping Jiang; Jin Hua Li; Sa Ke Wang

doi:10.4028/www.scientific.net/AMR.399-401.589

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 399-401Stability of the Vanadium Oxide Films Forme by...

Stability of the Vanadium Oxide Films Forme by Reactive Sputtering and Ion Beam Enhanced Deposition Methods

Abstract:

Vanadium oxide film is a common sensing film for infrared detector and uncooled infrared imaging devices, its stability directly affects the use of the thetse infrared devices.In this paper, high and low temperature cycles fatigue tests was used to check and compare the stability of the vanadium oxide films formed by different methods.The change of the temperature coefficient of resistance(TCR) and the room temperature resistance were measured and compared for the vanadium oxide film prepared by reactive sputtering and vanadium dioxide films by Ion Beam Enhanced Deposition(IBED) method. The result indicated tungsten doped Vanadium dioxide film by IBED is the most stable and has a higher TCR.

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Periodical:

Advanced Materials Research (Volumes 399-401)

Pages:

589-592

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.399-401.589

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Online since:

November 2011

Authors:

Chang Liu, Mei Ping Jiang, Jin Hua Li, Sa Ke Wang

Keywords:

High and Low Temparature Fatigue Test, Stability, Vanadium Oxide Film

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References

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