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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 399-401Effects of Ion Doping at Different Sites on...

Effects of Ion Doping at Different Sites on Electrical Properties of Ferroelectric Bi₄Ti₃O₁₂ Ceramics

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Abstract:

Pure, La³⁺ doped at A site, V⁵⁺ doped at B site, and La³⁺ and V⁵⁺ co-doped ferroelectric Bi₄Ti₃O₁₂ (BTO), Bi_3.25La_0.75Ti₃O₁₂ (BLT), Bi₄Ti_2.98V_0.02O₃ (BTV) and Bi_3.25La_0.75Ti_2.98V_0.02O₁₂ (BLTV) were successfully prepared by conventional sintering technique. The structures of the ceramics were investigated by X-ray diffraction, Raman spectroscopy, and scanning electron microscopy. X-ray diffraction indicated that assemblages of all sintered ceramics consist of a single phase of Bi₄Ti₃O₁₂, implying that the A-site La³⁺ and B-site V⁵⁺ substitutions in this case do not affect the layered structure. Among these ceramics, BLTV ceramic exhibited the best electrical properties. The leakage current density of BLTV ceramic was only 1.3×10^-4 Acm^-2 at 40 KVcm^-1, two orders of magnitude lower than BTO ceramic. Besides, a saturated ferroelectric hysteresis loops with largest remnant polarization 2Pr of 30.6μC/cm² was observed for this sample. These suggested that the co-doped Bi₄Ti₃O₁₂ ceramic by La³⁺ and V⁵⁺ at A and B sites showed advantages in application over the pure BTO, doped BLT and BTV ceramic, respectively.

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Periodical:

Advanced Materials Research (Volumes 399-401)

Pages:

796-804

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.399-401.796

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Online since:

November 2011

Authors:

Yun Yi Wu, Lei Wang, Zhi Qiang Hua, Tao Li, Xue Tao Yuan, Xu Dong Lv

Keywords:

Ceramic, Dielectric, Doping, Ferroelectric, Raman Spectroscopy

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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