Characteristics of Two-Stage Γ-Gate on AlGaAs/InGaAs/AlGaAs DH-HEMTs by Using AlGaAs/InGaP Etching-Stop Layers

Abstract:

Al_0.22Ga_0.78As/In_0.18Ga_0.82As/Al_0.22Ga_0.78As double heterojunction high electron mobility transistors (DH-HEMTs) with gate structures of traditional planar gate (PG), one-stage gamma-gate (1SΓG) and two-stage gamma-gate (2SΓG) formed by using the Al_0.22Ga_0.78As/In_0.49Ga_0.51P etch-stop layers (ESL) are simulated and presented in this work. Based on this proposed ESL structure design, the fabrication and implementation of studied DH-HEMT device with 1SΓG and 2SΓG could be expected. Both ΓG-structure devices show the better electric field property compared to PG-device. Simulated results reveal that there are no significant differences in common-source voltage-current characteristics among all studied devices. The obtained drain current density and transconductance of all studied devices are about 220 mAmm^-1 and 265 mSmm^-1. However, the current stability of ΓG-devices with larger bias operation would be improved due to its edge-effect of ΓG extended-region. In addition, the electric field intensity under the gate-footprint is effectively reduced by both studied ΓG structures. The electric field peak value of PG-device is 498 kV cm^-1, and it would be reduced down to about 210 kVcm^-1 and 178 kVcm^-1 for 1SΓG- and 2SΓG-device, respectively. On the other hand, some frequency property dropping is observed from studied device with 1SΓG or 2SΓG due to the side-edge extension of ΓG-device would create the additional parasitic capacitance. The obtained cut-off frequencies are 15 GHz, 10.5 GHz and 10 GHz for PG-, 1SΓG- and 2SΓG-device (at V_GS=+5 V and V_GS=-0.75 V), respectively.

• Periodical: Advanced Materials Research (Volumes 415-417)
• Pages: 1327-1332
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.415-417.1327
• Online since: December 2011
• Authors: Jia Chuan Lin, Fu Xiang Zeng, Jia Na Wei, Chi Ting Liu, Meng Kai Hsu, Hsi Ting Hou
• Keywords: Edge Effect, Etch Stop Layer, Gamma Gate, High Electron Mobility Transistors

References

[1] L. D. Nguyen, A. S. Brown, M. A. Thompson and L. M. Jelloian: IEEE Electron Device Lett. Vol. 39 (1992), p. (2007)

[2] H. M. Shieh, W. C. Hsu, T. T. Hsu, C. L. Wu and T. S. Wu: IEEE Electron Device Lett. Vol. 14 (1993), p.581

[3] D. W. Du, S. W. Duncan, D. Eskandarian, B. Golja, B. C. Kane, S. P. Svensson, S. Weibreb and N. E. Byer: IEEE Trans. Microw. Theory Vol. 42 (1994), p.2590

[4] Y. J. Jeon, Y. H. Jeong, B. Kim, Y. G. Kim, W. P. Hong and M. S. Lee: IEEE Electron Device Lett. Vol. 47 (2000), p.1115

[5] S. Arai and H. Tokuda: Solid-State Electron. Vol. 41 (1997), p.1575

[6] S. F. Yoon, B. P. Gay, H. Q. Zheng, H. T. Kam and J. Degenhardt: IEEE Trans. Electron Devices (2002), p.1039

[7] E. Lan, E. Johnson, B. Knappenberger and M. Miller: IEEE MTT-S Digest (2002), p.1039

[8] H. C. Chiu, C. S. Cheng and Y. J. Shih: Semicond. Sci. Technol. Vol. 21 (2006), p.55

[9] H. R. Chen, M. K. Hsu, S. Y. Chiu, W. T. Chen, G. H. Chen, Y. C. Chang, C. C. Su and W. S. Lour: Semicond. Sc. Technol. Vol. 19 (2007), p.119

[10] P. K. T. Mok and C. A. Salama: IEEE Trans. Electron Devices Vol. 41 (1994), p.246

[11] A. Wakejima, K. Ota, K. Matsunaga and M. Kuzuhara: IEEE Trans. Electron Devices Vol. 50 (2003), p. (1983)

[12] H. C. Chiu, C. S. Cheng and C. C. Wei: Semicond. Sci. Technol. Vol. 21 (2006), p.1432

[13] M. K. Hsu, S. Y. Chiu, C. H. Wu, D. F. Guo and W. S. Lour: Semicond. Sci. Technol. Vol. 23 (2008), p.125014