Preparation of Y4MgSi3O13:Tb3+,Ce3+ Green Emitting Phosphor for White Light Emitting Diodes and its Luminescence Study

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Abstract:

The Y4MgSi3O13:Tb3+,Ce3+green phosphors are synthesized by sol-gel method, the preparation temperature, reduction atmosphere and luminescence characteristics of Y4MgSi3O13 doped with single Ce3+ ions and Ce3+,Tb3+ ions have been studied. The excitation and emission spectra of phosphors is determined by fluorescence spectrophotometer. The results show that: luminous intensity of Y4MgSi3O13:Tb3+phosphors increased after doped with Ce3+ ions and the optimal doping concentration of Ce3+ is 0.04. Y3.94MgSi3O13: 0.02Tb3+,0.04Ce3+ green phosphor has the best luminescence characteristics under reduction atmosphere(H2:N2=1:3) at 1000°C, the phosphor gives intense green emission at 550nm originating from the 5D47F5 transition of Tb3+ ions.

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Advanced Materials Research (Volumes 415-417)

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1333-1339

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December 2011

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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