Effects of the Substrates Temperatue and Argon Oxygen Ratio on ZnO Thin Films

Abstract:

Abstract. Using the radio frequency reactive magnetron sputtering technique, ZnO and Al-dopped ZnO thin films were fabricated on glass substrate by changing the Ar/O₂ ratio and substrate temperature. The film crystallinity、optical properties and surface morphology were investigated by X-ray diffraction、 UV - visible spectrophotometer and scanning electron microscopy (SEM). The XRD results showed that by changing the argon oxygen ratio, Al-dopped ZnO films deposited at sputtering power of 40W and room temperature for 1 hour sputtering time showed no significant peaks, suggesting that the film growth was amorphous. UV-Vis spectrophotometer at 400nm wavelength test showed less than 90% light transmission rate. When substrate temperature was increased to 200 ° C, significant (002) diffraction peak and transmittance of 88% or more in the 400 ~ 800nm wavelength range appeared. A minimum XRD diffraction peak FWHM was found at substrate temperature of 300 ° C. TEM showed well crystal growth with maximum grain size at 300 ° C, XRD showed that there are only (101) peaks ,no (002) peaks in Al- doped ZnO.

• Periodical: Advanced Materials Research (Volumes 415-417)
• Pages: 1953-1958
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.415-417.1953
• Online since: December 2011
• Authors: Hua Zhu, Hui Wen Liu, Hao Gao, Xiao Wei Feng
• Keywords: Magnetron Sputtering, Transmittance, X-Ray Diffraction (XRD), ZnO Thin Film

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