Effect of Hetero-Interfaces on Rashba Spin-Orbit Coupling in a Gated In_0.53Ga_0.47As/InP Quantum Well Structure

Abstract:

We investigate the values of the Rashba spin-orbit coupling parameter α in a gated In_0.53Ga_0.47As/InP quantum well structure using the k•p formalism. With more positive gate voltage applied, the quantum well potential profile becomes more symmetric and the value of α decreases. The theoretical values of α are much smaller than experimental ones. The discrepancy can be reasonably explained by the neglect of the interface contribution in the k•p formalism and the formation of additional InAs_xP_1-x and Ga_xIn_1-xAs_yP_1-y interfacial layers in our sample.

• Periodical: Advanced Materials Research (Volumes 415-417)
• Pages: 1988-1991
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.415-417.1988
• Online since: December 2011
• Authors: Yuan Ming Zhou
• Keywords: Hetero-Interface, k•p Formalism, Quantum Well, Rashba Spin-Orbit Coupling

References

[1] G. Dresselhaus: Phys. Rev. Vol. 100 (1955), p.580.

[2] Y. A. Bychkov and É. I. Rashba: JETP Lett. Vol. 39 (1984), p.78.

[3] M. I. Dyakonov and V. Y. Kachorovskii: Sov. Phys. Semicond. Vol. 20 (1986), p.110.

[4] G. Engles, J. Lange, Th. Schäpers and H. Lüth: Phys. Rev. B Vol. 55 (1997), p.1958.

[5] J. Nitta, T. Akazaki, H. Takayanagi and T. Enoki: Phys. Rev. Lett. Vol. 78 (1997), p.1335.

[6] T. Koga, J. Nitta, T. Akazaki and H. Takayanagi: Phys. Rev. Lett. Vol. 89 (2002), p.046801.

[7] S. Datta and B. Das: Appl. Phys. Lett. Vol. 56 (1990), p.665.

[8] B. Das, S. Datta and R. Reifenderger: Phys. Rev. B Vol. 41 (1990), p.8278.

[9] S. Hikami, A. I. Larkin and Y. Nagaoka: Prog. Theor. Phys. Vol. 63 (1980), p.707.

[10] S. V. Iordanskii and Yu. B. Lyanda-Geller: JETP Lett. Vol. 60 (1994), p.199.

[11] L. E. Golub: Phys. Rev. B Vol. 71 (2005), p.235310.

[12] Th. Schäpers, G. Engels, J. Lange, Th. Klocke, M. Hollfelder and H. Lüth: J. Appl. Phys. Vol. 83 (1998), p.4324.

[13] T. Nihei, Y. Suzuki, M. Kohda and J. Nitta: Phys. Stat. Sol. C Vol. 3 (2006), p.4239.

[14] Y. Lin, T. Koga and J. Nitta: Phys. Rev. B Vol. 71 (2005), p.045328.

[15] Y. M. Zhou, G. Yu, L. M. Wei, K. H. Gao, W. Z. Zhou, T. Lin, L. Y. Shang, S. L. Guo, J. H. Chu, N. Dai and D. G. Austing: J. Appl. Phys. Vol. 107 (2010), p.053708.

[16] E. A. de Andrada e Silva: Phys. Rev. B Vol. 46 (1992), p.1921.

[17] E. A. de Andrada e Silva, G. C. La Rocca and F. Bassani: Phys. Rev. B Vol. 50 (1994), p.8523.

[18] 1D Poisson, by G. Snider, http://www.nd.edu/~gsnider/.

[19] W. Desrat, F. Giazotto, V. Pellegrini, F. Beltram, F. Capotondi, G. Biasiol, L. Sorba and D. K. Maude: Phys. Rev. B Vol. 69 (2004), p.245324.

DOI: 10.1103/physrevb.71.153314

[20] W. Desrat, F. Giazotto, V. Pellegrini, M. Governale, F. Beltram, F. Capotondi, G. Biasiol and L. Sorba: Phys. Rev. B Vol. 71 (2005), p.153314.

DOI: 10.1103/physrevb.71.153314

[21] R. Benzaquen, A. P. Roth and R. Leonell: J. Appl. Phys. Vol. 79 (1996), p.2640.

[22] T. Anan, S. Sugou, K. Nishi and T. Ichihashi: Appl. Phys. Lett. Vol. 63 (1993), p.1047.