Silicon Float Zone Single Crystal Automatic Growth

Li Hui Jin; Yu Tian Wang; Hao Ping Shen; Jia Liu; Chun Geng Yang; Yan Jun Wang; Jia Xin Chen

doi:10.4028/www.scientific.net/AMR.430-432.361

Paper Titles

Crack Size Tolerance of Under-Matched Joints of Hull Steel with Different Weld Toughness
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Preparation and Laboratory Study of Cationic Copolymer Clay Stabilizer PDA
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Process Conditions of Exfoliated Single-Layer Graphite
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Study on Mathematical Model of Homogenization of Dendritic Segregation
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Silicon Float Zone Single Crystal Automatic Growth
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Experimental Study on Nitrogen-Spray Water Quenching for 9SiCr
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Nanaostructure-Dendrite Ti₄₄Cu₄₆Co₄Zr₆ Composite with Excellent Mechanical Properties
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Influence of SiC Whisker on Formation and Oxidation Resistance of Coating for C/C Composite
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Preparation and Tribological Behavior of Carbon Fiber Reinforced Pantograph Slide Plate
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 430-432Silicon Float Zone Single Crystal Automatic Growth

Silicon Float Zone Single Crystal Automatic Growth

Abstract:

As basis of the big diameter crystal development, the single crystal automatic growth is the most important technique for system standardization and mass production. In this article, author introduced a new useful way for the single crystal automatic growth of float zone. By setting the growth interval and controlling parameter, PLC controller could automatically control the single crystal growth when the single crystal’s diameter is greater than 50mm. This method applied to the machine system can greatly reduce the fault of manual operation as well as labor intensity. Also it improved the single crystal quality which increases the ability to develop big diameter single crystal in the future.