Surface Morphology and Roughness of Cu Thin Films Prepared by Ionized Cluster Beam Deposition

Bo Cao; Tong Rui Yang; Gong Ping Li; Seong Jin Cho; Hee Kim

doi:10.4028/www.scientific.net/AMR.430-432.419

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 430-432Surface Morphology and Roughness of Cu Thin Films...

Surface Morphology and Roughness of Cu Thin Films Prepared by Ionized Cluster Beam Deposition

Abstract:

The Cu thin films were deposited on P type Si (111) substrates by ionized cluster beam (ICB) technique. The surface morphology and roughness of Cu thin films were studied at different deposition condition by atomic force microscopy (AFM). The results show that the average grain size and surface roughness of the Cu thin films deposited at an acceleration voltage of 3 kV is smaller than other conditions.

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Advanced Materials Research (Volumes 430-432)

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419-422

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https://doi.org/10.4028/www.scientific.net/AMR.430-432.419

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Online since:

January 2012

Authors:

Bo Cao, Tong Rui Yang, Gong Ping Li, Seong Jin Cho, Hee Kim

Keywords:

Atomic Force Microscopy (AFM), Cu Films, Ionized Cluster Beam (ICB), Surface Morphology, Surface Roughness (SR)

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