A Fully Integrated 5.2-GHz CMOS Variable Gain LNA for 802.11a WLAN

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Abstract:

A fully integrated 5.2GHz variable gain low noise amplifier (VGLNA) in a 0.18μm CMOS process is proposed in this paper. The VGLAN can achieve a maximum small signal gain of 17.85 dB within the noise figure (NF) of 2.04 dB and a minimum gain of 2.04 dB with good input return loss. The LNA’s P1dB in the high gain mode is -17.5 dBm. The LAN consumes only 14.58 mW from a 1.8V power supply.

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Advanced Materials Research (Volumes 433-440)

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5579-5583

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January 2012

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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[1] Hirad Samavati, Hamid R. Rategh, Thomas H. Lee, A Fully-Integrated 5GHz CMOS Wireless-LAN Receiver,. 2001 IEEE International Solid-State Circuits Conference.

DOI: 10.1109/isscc.2001.912607

Google Scholar

[2] Y. Aoki, M. Fujii, S. Ohkubo, S. Yoshida, T. Niwa, Y. Miyoshi, H. Dodo,N. Goto, H. Hida. A 1. 4-dB-NF variable-gain LNA with continuouscontrol for 2-GHz-band mobile phones using InGaP emitter HBTs,. Inin RFIC Symp., Dig. Tech. Papers, pages p.231 – 234, (2001).

DOI: 10.1109/rfic.2001.935682

Google Scholar

[3] S. Park and W. Kim, Design of a 1. 8 GHz Low Noise Amplifier for RF Front-end in a 0. 8μm, Consumer Electronics, IEEE Transactions on. vol. 47, pp.10-15, Feb. (2001).

DOI: 10.1109/30.920413

Google Scholar

[4] B. Ray, T. Manku, R. D. Beards, J. J. Nisbet, and W. Kung, A highly linear bipolar IV folded cascode 1. 9 GHz low noise amplifier, in Bipolar/BiCMOS Circuits and Technology Meeting, pp.157-160, (1999).

DOI: 10.1109/bipol.1999.803549

Google Scholar

[5] Derek K. Shaeffer, Thomas H. Lee. A 1. 5-V, 1. 5-GHz CMOS low noise amplifier [J]. IEEE Journal of Solid-State Circuits, 1997, 32(5): 745-759.

DOI: 10.1109/4.568846

Google Scholar

[6] Derek K. Shaeffer, Thomas H. Lee. Corrections to A 1. 5-V, 1. 5-GHz CMOS low noise amplifier, [J]. IEEE Journal of Solid-State Circuits, 2005, 40(6): 1397-1398.

DOI: 10.1109/jssc.2005.848626

Google Scholar

[7] Derek K. Shaeffer, Thomas H. Lee. Comment on corrections to A 1. 5-V, 1. 5-GHz CMOS low noise amplifier, [J]. IEEE Journal of Solid-State Circuits, 2006, 41(10): 2359.

DOI: 10.1109/jssc.2006.882679

Google Scholar

[8] Jihai Duan, Zhigong Wang, Zhiqun Li, A Fully Integrated LNA for 3-5 GHz UWB Wireless Applications in 0. 18-μm CMOS Technology, Antennas, Propagation and EM Theory, 2008. ISAPE 2008. 8th International Symposium on 2-5 Nov. 2008, pp.1274-1277.

DOI: 10.1109/isape.2008.4735457

Google Scholar

[9] T. H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits, 1sted. New York: Cambridge Univ. Press, (1998).

Google Scholar

[10] Ji-hai Duan, Xiao-ting Han, Sheng Li, A Wideband CMOS Low-Noise Amplifier for 3-5 GHz UWB Systems, 2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications.

DOI: 10.1109/mape.2009.5355851

Google Scholar

[11] LinMin, Wang Haiyong, Li Yongming and Chen Hongyi, A 1. 45GHz LNA with Low Power, Wide Variable Gain Range and Ultra Low Noise Degradation, CHINESE JOURNAL OF SEMICONDUCTORS Vo l . 25, No. 8 Aug . (2004).

DOI: 10.1109/mwscas.2002.1186849

Google Scholar

[12] Shaikh K. Alam and Joanne DeGroat , A 1-V 5GHz variable gain low noise amplifier amplifier in 0. 18μm CMOS, IEEE CCECE/CCGEI, Ottawa, May (2006).

DOI: 10.1109/ccece.2006.277470

Google Scholar

[13] K. Raja et al., A fully integrated Variable Gain 5. 75-GHz LNA with on chip Active Balun for WLAN, in Radio FrequencyIntegrated Circuits Symposium, pp.439-442, June (2003).

DOI: 10.1109/rfic.2003.1213980

Google Scholar