Low-Density InAs Quantum Dots Growth by Molecular Beam Epitaxy

Zhan Guo Li; Ming Hui You; Guo Jun Liu; Xin Gao; Lin Li; Zhi Peng Wei; Mei Li; Yong Wang; Xiao Hua Wang; Lian He Li

doi:10.4028/www.scientific.net/AMR.442.12

Paper Titles

Preface, Committees and Reviewers

Facile Synthesis of LnPO₄: Tb (Ln = Ce, Gd) Green Emission Phosphors at Specific Temperature (80 or 680°С)
p.3

Ionic Liquid-Based Luminescent Gd₂SiO₅: Tb Submicro-Meter Phosphors
p.8

Low-Density InAs Quantum Dots Growth by Molecular Beam Epitaxy
p.12

Improved Resistivity of GaN with Partially Mg-Doped Grown on Si(111) Substrates by MOCVD
p.16

On Preparation of High Permeability Mn-Zn Ferrite
p.21

Growth and High Pressure Investigation of (C₆₀)_n@SWNT
p.26

Effect of Sintering Temperature on Electrical Properties of ZnO Varistor Ceramics
p.31

Applications of Nanotechnology in Green Energy Manufacturing
p.35

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 442Low-Density InAs Quantum Dots Growth by Molecular...

Low-Density InAs Quantum Dots Growth by Molecular Beam Epitaxy

Abstract:

We investigate the growth of low-density(^~4×10⁸cm^-2) InAs quantum dots (QDs) on GaAs by molecular beam epitaxy,with emission wavelength up to 1.3 µm at room temperature were achieved. The QDs density are sensitive to growth temperature,growth rate.The optical properties of the QDs annealing temperature used after spacer layer growth that is attributed to the suppressed In segregation from the QDs into the cap layer, reduced the strain in the QDs,significant decrease of integrated PL intensity was observed as the annealing temperature increases.

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Periodical:

Advanced Materials Research (Volume 442)

Pages:

12-15

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.442.12

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Online since:

January 2012

Authors:

Zhan Guo Li, Ming Hui You, Guo Jun Liu, Xin Gao, Lin Li, Zhi Peng Wei, Mei Li, Yong Wang, Xiao Hua Wang, Lian He Li

Keywords:

Low-Density, Molecular Beam Epitaxy, Quantum Dot (QD)

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