Improved Resistivity of GaN with Partially Mg-Doped Grown on Si(111) Substrates by MOCVD

Abstract:

The continuous 1.0 µm GaN epilayers with and without partially Mg-doped were grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The DC current-voltage (I-V), time-of-flying secondary ion mass spectrometer (ToF-SIMS) and atomic force microscope (AFM) measurements were employed for comparison to characterize surface morphology and resistivity of GaN buffer layer with and without partially Mg-doped. The sample of 1.0 µm GaN epilayer with partially Mg-doped shows much higher resistivity than sample without Mg-doped, which indicates the partially Mg doping in 1.0 µm GaN epilayer can effectively increase the resistivity of GaN grown on Si (111) substrates. As a result, the high resistivity GaN buffer layer with good surface morphology is achieved in the partially Mg-doped GaN buffer layer.

• Periodical: Advanced Materials Research (Volume 442)
• Pages: 16-20
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.442.16
• Online since: January 2012
• Authors: Yong Wang, Nai Sen Yu, Ming Li, Kei May Lau
• Keywords: Gallium Nitride (GaN), High Resistivity, Mg-Doped, MOCVD, Si Substrate

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