Effect of Colloidal Silica as Abrasive on Low-k Dielectric Materials in Chemical Mechanical Planarization

Yan Gang He; Jia Xi Wang; Xiao Wei Gan; Wei Juan Li; Yu Ling Liu

doi:10.4028/www.scientific.net/AMR.455-456.1149

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 455-456Effect of Colloidal Silica as Abrasive on Low-k...

Effect of Colloidal Silica as Abrasive on Low-k Dielectric Materials in Chemical Mechanical Planarization

Abstract:

With low-k dielectric materials taking the place of oxide dielectrics as the primary dielectric materials, the low-k dielectric materials and interconnection Cu metals during Chemical Mechanical Planarization (CMP) is becoming a critical surface quality issue as well. In this study, experiments are carefully designed and conducted to investigate the effects of colloidal silica under compared acidic slurry and self-prepared alkaline slurry on k value of low-k dielectric materials, and in both of the slurry, colloidal silica (20~30nm) was used as polishing abrasive. The results showed that k value of low-k dielectric materials both increased within a similar range (self-prepared alkaline slurry, 3.27~3.33; commercial acidic slurry, 3.26~3.32), however, the results showed a obviously different result from reference’s report.

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Periodical:

Advanced Materials Research (Volumes 455-456)

Pages:

1149-1152

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.455-456.1149

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Online since:

January 2012

Authors:

Yan Gang He, Jia Xi Wang, Xiao Wei Gan, Wei Juan Li, Yu Ling Liu

Keywords:

Abrasive, Alkaline Slurry, Chemical Mechanical Planarization, Colloidal Silica, Low-k Dielectric Materials

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References

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