UV LEDs with Low Dislocation GaN Buffer Layers Grown by MOCVD

Abstract:

New MOCVD grown UV (ultra-violet) LEDs using low dislocation density GaN buffer layers on sapphire have been studied. Two different LED characteristics of GaN substrates, i.e. 5um-thick and 20um-thick buffer layers, on sapphire are compared with each other. The enhanced LED characteristics show ~29.5% reduction in current-voltage resistance, ~8.5% reduction in turn-on voltage and output power saturation at higher current. Better GaN buffer quality and heat dissipation due to the lower defect density are believed to the enhanced reason.

• Periodical: Advanced Materials Research (Volume 459)
• Pages: 63-66
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.459.63
• Online since: January 2012
• Authors: Kao Feng Yarn, Wen Chung Chang, I Ting Hsieh
• Keywords: Buffer Layer, Gallium Nitride (GaN), Metalorganic Chemical Vapor Deposition (MOCVD), Superlattice, Ultra-Violet (UV) LED

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