Preparation of Pure Anatase TiO₂ Thin Films by DC Sputtering Technique: Study on the Effect of Oxygen Partial Pressure

Abstract:

Titanium dioxide thin films were deposited by DC reactive magnetron sputtering on silicon wafer and glass slide at sputtering power of 210 watt under total pressure of 5.0×10^-3 mbar at different oxygen partial pressure. A pure metallic titanium target was sputtered in a mixture of argon and oxygen gases. The crystal structure and surface morphology were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The optical transmission was measured by spectrophotometer. The results show that the crystalline was pure anatase structure titanium dioxide thin films. The surface morphology of the films is strongly the oxygen partial pressure. It was found that surface roughness of the thin films was around 2.42 to 4.82 nm and the thickness was around 72 to130 nm. In addition, it was found that all the titanium dioxide thin films were deposited by reactive sputtering with the different oxygen pressure exhibit the transparency property.

• Periodical: Advanced Materials Research (Volumes 463-464)
• Pages: 1415-1419
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.463-464.1415
• Online since: February 2012
• Authors: P. Pungboon Pansila, Nirun Witit-Anun, Tongsai Jamnongkan, Surasing Chaiyakun
• Keywords: Oxygen Partial Pressure, Reactive, Sputtering, Thin Film, TiO₂

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