The Effect of N2 Gas Pressure during the Rapid Thermal Process on the Structural and Morphological Properties of Cigs Films

Xiao Long Zhu; Yao Ming Wang; Ai Min Li; Lei Zhang; Fu Qiang Huang

doi:10.4028/www.scientific.net/AMR.463-464.614

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 463-464The Effect of N2 Gas Pressure during the Rapid...

The Effect of N₂ Gas Pressure during the Rapid Thermal Process on the Structural and Morphological Properties of Cigs Films

Abstract:

The effect of N₂ gas pressure during the rapid thermal process (RTP) on the structural and morphological properties of CIGS films was investigated. The precursor was prepared by sputtering from a single quaternary CIGS target. XRD characterization demonstrated that there were two phase of CuIn_0.7 Ga_0.3 Se₂ and Ga-rich CuIn_{Subscript text}1-xGaxSe_{Subscript text}2 chalcopyrite structure in all of the selenized CIGS films. Too low and too high N₂gas pressure induced compact but small grain-size morphologies due to the insufficient Se supply. Furthermore, all of the samples exhibited delaminated cross-sectional morphologies. Finally, Photovoltaic devices prepared from absorbers selenized under 4 Torr N₂ gas pressure resulted in efficiency of 4.8%.

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Periodical:

Advanced Materials Research (Volumes 463-464)

Pages:

614-617

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.463-464.614

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Online since:

February 2012

Authors:

Xiao Long Zhu, Yao Ming Wang, Ai Min Li, Lei Zhang, Fu Qiang Huang

Keywords:

Cu(In,Ga)Se₂, N₂ Gas Pressure, RTP, Thin Film

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