Preparation and Analysis of Sputtered Cu2ZnSnSe4 Thin Films

Dong Hau Kuo; Hsien Pen Wu

doi:10.4028/www.scientific.net/AMR.463-464.602

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 463-464Preparation and Analysis of Sputtered Cu2ZnSnSe4...

Preparation and Analysis of Sputtered Cu₂ZnSnSe₄ Thin Films

Abstract:

Cu₂ZnSnSe₄ (CZTSe) thin films with the advantages of low cost, abundance in resources, and the suitable band-gap of 0.9~1.1 eV have been the potential materials for solar cells, though the Cu(In,Ga)Se2 thin films have received most of the attentions. In this study, CZTSe thin films were prepared by direct-current (D.C.) sputtering using three self-made CZTSe targets in different compositions. The sputtered films displayed a preferred orientation in (112) by the X-ray diffraction analysis. The films were also characterized by field-emission scanning electron microscopy and energy dispersion spectroscopy. The films had the band-gap of 0.8~1.08 eV analyzed by absorption spectroscopy. CZTSe films were p-type and had a low electrical conductivity of 10-3 ohm-cm and a high carrier concentration of 10²⁰~10²¹ cm-2.

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Periodical:

Advanced Materials Research (Volumes 463-464)

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602-606

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.463-464.602

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Online since:

February 2012

Authors:

Dong Hau Kuo, Hsien Pen Wu

Keywords:

Cu₂ZnSnSe₄, Solar Cell, Sputtering

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