The Influence of Annealing Temperature on ZnO Thin Films by Oxidating Zinc Films Deposited with Magnetron Sputtering

Hai Bo Sun; Zhen Cui Sun; Cheng Shan Xue

doi:10.4028/www.scientific.net/AMR.463-464.624

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 463-464The Influence of Annealing Temperature on ZnO Thin...

The Influence of Annealing Temperature on ZnO Thin Films by Oxidating Zinc Films Deposited with Magnetron Sputtering

Abstract:

Zn films were prepared on Si (111) substrates by radio frequency magnetron sputtering system, which were subsequently annealed at different temperature in O2 ambient. Their microstructure, morphology, composition and optical properties, particularly as a function of annealing temperature, were studied by XRD, SEM, FTIR, XPS and PL characterizations. All the results show that the crystal quality of ZnO film can be improved by increasing annealing temperature, and the optimum annealing temperature is 800°C in our experiment. The XRD and SEM results show that the ZnO films have a hexagonal structure with cell constants of nm and nm under the optimum experimental conditions. The FTIR and XPS results further confirm hexagonal structure of ZnO. The PL result shows that best UV and green light emission are found in the samples annealed at 800°C.

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Advanced Materials Research (Volumes 463-464)

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624-628

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.463-464.624

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Online since:

February 2012

Authors:

Hai Bo Sun, Zhen Cui Sun, Cheng Shan Xue

Keywords:

Annealing Temperature, Magnetron Sputtering, ZnO Film

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References

[1] Z L Wang, J. Phys.: Condens. Matter., Vol. 16 (2004), p. R829.

Google Scholar

[2] S J An, W I Park, and G C Yi, et al, Appl. Phys. A , Vol. 74 (2002), p.509.

Google Scholar

[3] S. B Xue, H. Z Zhuang, and C. S Xue, et al, Eur. Phys.J. Appl. Phys. Vol. 36 (2006), p.1.

Google Scholar

[4] Takuma Suzuki, Chihiro Harada and Hiroki Goto, Curr. Appl. Phys., Vol. 4 (2004), p.643.

Google Scholar

[5] Y C Kong, D P Yu and B Zhang, et al, Appl. Phys. Letter., Vol. 78 (2001), p.407.

Google Scholar

[6] K Vanheusden, W L Warren and C H Seager, et al, J. Appl. Phys. Vol. 79 (1996), p.7983.

Google Scholar

[7] Z K Tang, G K L Wong, and P Yu, et al, Appl. Phys. Lett., Vol. 72 (1998), p.3270.

Google Scholar

[8] Y P Song, P W Wang, and H Q Lin, et al, J. Phys.: Condens. Matter, Vol. 15 (2005), p.5073.

Google Scholar

[9] F M Amanullah, K J Pratap and V Hari Babu, Mater. Sci. Eng. B, Vol. 52 (1998), p.93.

Google Scholar

[10] E M Bachari, G Baud and S Ben Amor, et al, Thin Solid Films, Vol. 348 (1999), p.165.

DOI: 10.1016/s0040-6090(99)00060-7

Google Scholar