Effect of FGM on Film Quality of Al onto Cu(001) Substrate by Considering Incident Energy and Deposition Rate

Meng Jie Jheng; Shun Fa Hwang; Zheng Han Hong

doi:10.4028/www.scientific.net/AMR.47-50.451

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 47-50Effect of FGM on Film Quality of Al onto Cu(001)...

Effect of FGM on Film Quality of Al onto Cu(001) Substrate by Considering Incident Energy and Deposition Rate

Abstract:

A molecular dynamic (MD) method is used to simulate Al atom depositing on Cu substrate by controlling the incident energy and the deposition rate for dual-target magnetron sputtering. At the interface, functional graded material (FGM) will be created to reduce the residual stress after the deposition process. The results indicate that the surface roughness of the deposited film will be reduced with the assistance of FGM, and more layers of FGM will reduce more the root-mean-square (RMS) value and the residual stress to obtain excellent quality of the deposited film.