Properties of ZnS Thin Films Prepared by CBD under Different Concentration of Complexing Agent

Abstract:

ZnS thin films were deposited on glass substrates using chemical bath deposition. The zinc sulfate and thiourea were used as precursors along with a stable complexing agent of sodium citrate in ammonia/ammonium chloride (pH=10.5) buffer solution. The ratio of Zn and complexing agent was changed from 6:1 to 1:1 by varying concentrations of the complexing agent. X-ray diffraction (XRD), scanning electron microscope (SEM) and UV-vis spectrophotometer were used to investigate the structure, micrograph and optical characteristics of the ZnS thin films respectively. The concentration of sodium citrate has an effect on the crystalline size and crystallization. For the as-deposited thin films, the values of transmittances and Eg are about 85% and 3.8 eV respectively. However, they are decreased to 75% and 3.4 eV respectively after annealing. In addition, the concentration of the complexing agent has no remarkable influence on both the transmittance and the energy gap. The results show that the ZnS thin films with resistivity of 4.34×104 Ωcm are suitable for optoelectronic applications.

• Periodical: Advanced Materials Research (Volumes 472-475)
• Pages: 1572-1576
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.472-475.1572
• Online since: February 2012
• Authors: Jie Liao, Hai Fang Zhou, Shu Ying Cheng
• Keywords: Chemical Bath Deposition (CBD), Optical Property, Resistivity, ZnS Thin Films

References

[1] Seung WookShin, SoRaKang, JaeHo Yun: Solar Energy Materials & Solar Cells Vol. 95 (2011), pp.856-863

[2] Fei Long, Wei-Min Wang, Zhan-Kui Cui: Chemical Physics Letters Vol. 462 (2008), pp.84-87

[3] F. Gö de, C. Gümüs, M. Zor: J. Cryst. Grow. Vol. 299 (2007), pp.136-141

[4] R.N. Bhattacharya, K. Ramanathan: Solar Energy Vol. 77 (2004), p.679–683

[5] Xiaochun Wu, Fachun Lai, Limei Lin: Applied Surface Science Vol. 254 (2008), pp.6455-6460

[6] M. GruKn, A. Storzum, M. Hetterich: Journal of Crystal Growth Vol. 201/202 (1999), pp.457-460

[7] Everett Y. M. Lee, Nguyen H. Tran, Robert N. Lamb: Applied Surface Science Vol. 241 (2005), pp.493-496

[8] Tokio Nakada, Masashi Hongo, Eiji Hayashi: Thin Solid Films Vol. 431-432 (2003), pp.242-248

DOI: 10.1016/s0040-6090(03)00265-7

[9] F. Go de, C. Gu mu, M. Zor: Journal of Crystal Growth Vol. 299 (2007), pp.136-141

[10] Xiaosheng Fang, Yoshio Bando, Changhui Ye, Guozhen Shen, Dmitri Golberg: J. Phys. Chem. Vol. 111 (2007), pp.8469-8474

[11] Aytunc Ates, M. Ali Yıldırım, Mutlu Kundakcı, Aykut Astam: Materials Science in Semiconductor Processing Vol. 10 (2007), pp.281-286

DOI: 10.1016/j.mssp.2008.04.003

[12] K. Nagamani, N. Revathi, P. Prathap: Current Applied Physics Vol. 12 (2012), pp.380-384