Preparation of Porous Silicon and Effect of Gettering on the Resistivity

Abstract:

The porous silicon layer was fabricated by electrochemical etching process using an aqueous HF-based electrolyte. The characterizations of porous silicon layer were investigated by Emission-type scanning electron microscope (SEM), Raman spectra and X-ray diffraction (XRD). With the current density increasing, the pore diameter and density become much bigger. This result also was confirmed by Raman spectra and XRD result of samples, which revealed the decreasing of grain size of silicon. The resistivity of crystalline silicon increased when the porous layer was removed after heat treatment at 850°C for 2.5h, which should be attributed to the gettering process of porous silicon.

• Periodical: Advanced Materials Research (Volumes 476-478)
• Pages: 1794-1797
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.476-478.1794
• Online since: February 2012
• Authors: Su Xia Guo, Yi Tan, Jia Yan Li, Ya Qiong Li, Chen Guang Liu
• Keywords: Electrochemical Etching, Gettering, Porous Silicon, Resistivity

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