Compositional and Deposition Rate Dependence upon RF Substrate Bias of RF Sputtered Ni-Fe Films

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Abstract:

82% Ni-Fe films have been prepared using Radio frequency (R.F) sputtered, R.F induced substrate bias. The results presented are of study of sputter films deposition at various RF substrate bias conditions so that suitable sputtering rate with optimum (target) composition could be determined for magnetoresistive sensing applications. Films have been sputtered with substrate temperature of 200° C, sputter gas (argon) pressure of 10mTorr with film thicknesses near 1000 °A. Substrate bias potential in the range 0 V to -400 V is varied in order to determine its dependence upon film composition and deposition rate. The result presented indicates the strong bias dependence upon film composition and deposition rate with most useful films for the application in concern could be produced at substrate bias potential in the range of -80 V to -120 V.

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Advanced Materials Research (Volumes 488-489)

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452-456

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March 2012

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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[1] G. S Anderson, W.N. Mayer & G.K. Wehner: Sputtering of dielectrics by high frequency fields, J. Appl. Physics 33 (10) 2991-2 (1962).

DOI: 10.1063/1.1728549

Google Scholar

[2] P. Vuoristo, J. Wahlroos, T. Mantyla, & P. Kettunen: Thin Solid Films 166 255-62 (1988).

DOI: 10.1016/0040-6090(88)90386-0

Google Scholar

[3] K. T Yuanm and C. L Chia: Characterization of reactively r. f sputtered tantalum oxide films Thin Solid Films 166 325-31 (1988).

DOI: 10.1016/0040-6090(88)90221-0

Google Scholar

[4] P. Akhtar: Radio-Frequency sputtered, Radio-frequency biased Nickel Iron films for magnetoresistive applications PhD thesis in the University of Wales (1993).

Google Scholar

[5] R.S. Wilder and R,G. Johanson: High Vacuum systems for sputtering applications, Solid State Technol, pp.95-8 (Nov. 1985).

Google Scholar

[6] P. Akhtar, T. Javid and A. Aziz: Some aspects of Deposition Parameters of RF Sputtered Ferromagnetic Film Germane to the Study of Magnetoresistive Sensing Devices" Advanced Materials Research Vols. 264-265 (2011).

DOI: 10.4028/www.scientific.net/amr.264-265.160

Google Scholar

[7] P. Akhtar, T. Javid and M. Riaz: An investigation into the effects of substrate temperature on magnetic properties of r. f sputtered NiFe films" Advanced Materials XI Volume. 442 Pp 109-115 Trans Tech Publication Switzerland (2010).

DOI: 10.4028/www.scientific.net/kem.442.109

Google Scholar

[8] Chapman, B.N. Glow discharge Processes Wiley, New York (1980).

Google Scholar

[9] P. R Oslon and G. K Wehner: Composition variation as a function of ejection angle in sputtering of alloys J. Vac. Sci. Technil. 14 (1) 319-21(1977).

Google Scholar

[10] A.J. Collins, C.J. Prior and C.J. Hicks: The magnetic Properties of RF-sputtered Permalloy and Mumetal films Thin Solid Films Vol. 86 (1981) pp.165-74.

DOI: 10.1016/0040-6090(81)90285-6

Google Scholar

[11] E. N Mitchell, H.B. Haukaas, B.D. Bale & J. B Streeper: Compositional and thickness dependence of ferromagnetic anisotropy in resistance of iron-nickel films J. Appl. Phys. 35 (9) (1964) 2604-8.

DOI: 10.1063/1.1713808

Google Scholar

[12] G. J Kominiak: Target and substrate interactions in bias sputter depositions J. Vac. Sci. Technol. 12 (3) 689-92 (1975).

Google Scholar

[13] J.J. Cuomo, R. J Gambino& R. Resendberg,: The influence of the Deposition of metallic films in r. f. and d. c. sputtering J. Vac. Sci. Technol. 11 (1) 34-40 (1974).

Google Scholar