Theoretical Investigations of the High-Pressure Optical Properties of γ-Si3N4

Dong Chen; Bao Ku Xiong

doi:10.4028/www.scientific.net/AMR.490-495.3874

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 490-495Theoretical Investigations of the High-Pressure...

Theoretical Investigations of the High-Pressure Optical Properties of γ-Si₃N₄

Abstract:

The high-pressure optical properties of the spinel γ-Si3N4 material have been calculated by the plane-wave pseudo-potential method. Our calculated lattice constant is in agreement with the theoretical results and available experimental data. γ-Si3N4 can be used as anti-reflection coatings in the energy range of 10eV～21eV due to high reflectivity. The electromagnetic wave (frequency: 8eV～17eV) can easily traverse the γ-Si3N4 crystal. The peak of the energy loss function is located around 22eV. More importantly, our calculated dielectric constant is 4eV (at 30GPa), which is in agreement with the calculated value.

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Periodical:

Advanced Materials Research (Volumes 490-495)

Pages:

3874-3877

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.490-495.3874

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Online since:

March 2012

Authors:

Dong Chen, Bao Ku Xiong

Keywords:

Si₃N₄, Dielectric Function, First-Principle, Semiconductor

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