Study on a Novel MEMS High G Acceleration Sensor

Ping Li; Yun Bo Shi; Jun Liu; Shi Qiao Gao

doi:10.4028/www.scientific.net/AMR.490-495.499

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 490-495Study on a Novel MEMS High G Acceleration Sensor

Study on a Novel MEMS High G Acceleration Sensor

Abstract:

This paper presents a novel MEMS high g acceleration sensor based on piezoresistive effect. For the designed sensor structure, the formula of stress, natural frequency and damping was derived in theory, and the resonant frequency can up to 500kHz. After the structure parameters were designed, the sensor was fabricated by the standard processing technology, and the sensitivity was tested by Hopkinson bar. According to the experimental results, the sensitivity of the high g acceleration sensor is 0.125μV/g at the impact load of 164,002g.