Study on Material Removal Rate of CMP 6H-SiC Crystal Substrate (0001) C Surface Based on Abrasive Alumina (Al2O3)

Jian Xiu Su; Jia Xi Du; Xing Long Liu; Hai Na Liu

doi:10.4028/www.scientific.net/AMR.497.250

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 497Study on Material Removal Rate of CMP 6H-SiC...

Study on Material Removal Rate of CMP 6H-SiC Crystal Substrate (0001) C Surface Based on Abrasive Alumina (Al₂O₃)

Abstract:

SiC crystal substrate has been widely used in the area of microelectronics, photonics and new materials, such as semiconductor lighting, integrated circuits, and so on. In this paper, the influences of the polishing slurry composition, such as the pH value, the abrasive size and its concentration, the dispersant and the oxidants, the rotational speed of the polishing platen and the workpiece and the polishing pressure on the material removal rate (MRR) of SiC crystal substrate (0001) C surface based on the alumina abrasive in chemical mechanical polishing (CMP). This study results will provide the reference for developing the slurry, optimizing the process parameters and researching the material removal mechanism in CMP of SiC crystal substrate.

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Periodical:

Advanced Materials Research (Volume 497)

Pages:

250-255

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.497.250

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Online since:

April 2012

Authors:

Jian Xiu Su, Jia Xi Du, Xing Long Liu, Hai Na Liu

Keywords:

Chemical Mechanical Polishing (CMP), Material Removal Rate (MRR), Polishing Slurry, SiC Crystal Substrate

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