Experimental Study of Material Removal Rate for Rotary Curved Surface Workpieces of Si₃N₄ in Chemical-Mechanical Polishing Using Taguchi Technique

Abstract:

By applying chemical-mechanical polishing (CMP) technique to high precision processing of rotary surface workpieces of silicon nitride (_Si3N4) ceramic, a CMP experimental device was established on a numerical control (NC) jig grinder. The polyurethane wheel and nonwoven cloth wheel was adoped. The Ce_O2 abrasive was applied to configure the water base polishing solution. Using Taguchi robust design method, through S/N ratios and analysis of variance, the influence of slurry concentration, polishing wheel speed and polishing wheel feed rate on material removal rate (MRR) were analyzed. With the increase of polishing wheel speed and polishing wheel feed rate, the MRR decreased. There was a balance concentration leading to the largest MRR. The best process parameters were selected: the slurry concentration of 20%, polishing wheel speed of 6000r/min, polishing wheel feed rate of 2.29mm/min, The result showed the descending order of selected process parameters impacting on MRR was polishing wheel speed, polishing wheel feed rate and slurry concentration.

• Periodical: Advanced Materials Research (Volume 497)
• Pages: 273-277
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.497.273
• Online since: April 2012
• Authors: Lin Lin Wan, Zhao Hui Deng, Sheng Chao Li, Piao Long
• Keywords: Chemical Mechanical Polishing (CMP), Material Removal Rate (MRR), Rotary Curved Surface, Taguchi Technique

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