Surface Morphology of Metal Oxide SnO₂ under Different Concentrations of Oxygen by Thermal Evaporation Method

Abstract:

SnO2 has been successfully grown on Si substrate using a thermal evaporation method, under different percentages of argon and oxygen gases. High purity Sn metal was used as reactants with deposition temperature were set at 900°C. Different oxygen concentrations range between 1.6 and 10% were used during thermal evaporation process. The as-prepared metal oxides were analyzed using SEM-EDS, XRD and UV-VIS. SnO2 nanowhiskers were obtained at lower oxygen concentrations (1.6 to 6% oxygen), while nanowires structures were formed at higher oxygen percentages. XRD results revealed SnO2 produced were highly crystalline and no other impurity phase diffraction peaks were detected. EDS analysis revealed that only Sn and O elements were present in the sample which are consistent with XRD results. UV-VIS result revealed that the optical band gap energy of the metal oxides produced have low significant effect with increasing oxygen concentration. Optical band gap energy for was within 3.3 eV, which was lower than the optical band gap energy of bulk SnO2.

• Periodical: Advanced Materials Research (Volume 501)
• Pages: 266-270
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.501.266
• Online since: April 2012
• Authors: Siti Nuurul Fatimah Hasim, Muhammad Azmi Abdul Hamid, Roslinda Shamsudin, Shahidan Radiman, Azman Jalar
• Keywords: Metal Oxide, SnO₂, Thermal Evaporation

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