Gan Nanowire Growth by Thermal Evaporation Method

Abstract:

In this research we introduce an inexpensive method to produce highly crystalline GaN Nanowires (NWs) grown on porous zinc oxide (PZnO) using commercial GaN powder, either in argon gas or combination of nitrogen and Ar gas atmosphere, by thermal evaporation. Morphological structural studies using transmission electron microscope (TEM) and scanning electron microscopy (SEM) measurements showed the role of porosity and different gas flowing, in the alignment and nucleation of these NWs. The NWs grown under flow of mix gases have very different diameters of between 50 and 200 nm, but those which were grown in Ar gas atmosphere, have rather uniform diameter of around 50 nm. The length of the GaN NWs was uniform, (around 10 µm). Optical and structural characterizations were performed by energy-dispersive X-ray spectroscopy (EDX) and high resolution X-ray diffraction (HR-XRD). Results revealed that these NWs are of single-crystal hexagonal GaN with [oooı] and [ıoīı] growth directions for the NWs grown under Ar and mixed gas flow.

• Periodical: Advanced Materials Research (Volume 501)
• Pages: 276-280
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.501.276
• Online since: April 2012
• Authors: Leila Shekari, Abu Hassan Haslan, Hassan Zainuriah
• Keywords: Crystal Growth, Gallium Nitride (GaN), Nanowire

References

[1] L.H. Robins, K.A. Bertness, J.M. Barker, N.A. Sanford, J.B. Schlager, Optical and structural study of GaN nanowires grown by catalyst-free molecular beam epitaxy. I. Near-band-edge luminescence and strain effects, Journal of Applied Physics 101 (2007) 113505.

DOI: 10.1063/1.2736264

[2] M.E. Messing, K. Hillerich, J. Johansson, K. Deppert, K.A. Dick, The use of gold for fabrication of nanowire structures, Gold Bulletin 42 (2009) 172-181.

DOI: 10.1007/bf03214931

[3] L. Shekari, H. A. Hassan, S. M. Thahab, Z. Hassan, Growth and Characterization of High-quality GaN Nanowires on PZnO and PGaN by Thermal Evaporation, Journal of Nanomaterials 2011 (2011) 6.

DOI: 10.1155/2011/454730

[4] K. Bertness, N. Sanford, J. Barker, J. Schlager, A. Roshko, A. Davydov, I. Levin, Catalyst-free growth of GaN nanowires, Journal of Electronic Materials 35 (2006) 576-580.

DOI: 10.1007/s11664-006-0102-4

[5] H. Peng, X. Zhou, N. Wang, Y. Zheng, L. Liao, W. Shi, C. Lee, S. Lee, Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition, Chemical Physics Letters 327 (2000) 263-270.

DOI: 10.1016/s0009-2614(00)00872-1

[6] X. Han, Y. Gao, X. Zhang, One-dimensional GaN nanomaterials transformed from one-dimensional Ga2O3 and Ga nanomaterials, Nano-Micro Letters 1 (2010) 4-8.

DOI: 10.1007/bf03353597

[7] L.Bornstein, New Series, Group III, 41B (Ed.: U. Rossler), Springer, Heidelberg 17 (1999).