Effect of in Concentration on the Optical Lattice Vibrations in Quaternary AlxInyGa1-x-yN Alloys

A.I. Aljameel; H. Abu Hassan; S.S Ng

doi:10.4028/www.scientific.net/AMR.501.281

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 501Effect of in Concentration on the Optical Lattice...

Effect of in Concentration on the Optical Lattice Vibrations in Quaternary Al_xIn_yGa_1-x-yN Alloys

Abstract:

Fourier transform infrared (FTIR) spectroscopy has been utilized to measure long-wavelength optical lattice vibrations of high-quality quaternary AlxlnyGa1-x-yN thin films at room temperature. The AlxlnyGa1-x-yN films were grown on c-plane (0001) sapphire substrates with AlN as buffer layers using plasma assisted molecular beam epitaxy (PA-MBE) technique with indium (In) mole fraction y = 0.0 to 0.10 and constant aluminium (Al) mole fraction x = 0.06. The experimental results indicated that the AlxlnyGa1-x-yN alloys had two-mode behavior, for the A1 (LO) and E1 (TO) modes.

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Advanced Materials Research (Volume 501)

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281-285

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https://doi.org/10.4028/www.scientific.net/AMR.501.281

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April 2012

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A.I. Aljameel, H. Abu Hassan, S.S Ng

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AlInGaN, FT-IR, phonon modes, P-Polarized, S-Polarized

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