Fabrication and Characterization of CIASSe Thin Film Photovoltaic Absorbers Using CIAS Nanocrystals

Abstract:

Cu(In_0.8Al_0.2)(SSe)₂ (CIASSe) absorber layers of thin film solar cell were prepared by selenization of Cu(In_0.8Al_0.2)S₂(CIAS) nanocrystals. The CIAS nanocrystals were synthesized by a new solution-based technique and successfully deposited on Mo-coated glass substrates in a one-step process. The phase structure, optical and electrical properties of CIASSe thin films were characterized by power X-ray diffraction (XRD), ultraviolet-visible (UV-Vis) spectrophotometer and the Hall Effect Measurement system. The results showed that single-phase CIASSe solid solution was successfully obtained for a selenization temperature of above 400oC. And the diffraction peaks shifted to the lower angle with an increase in selenization time and selenization temperature. The films selenized at 500oC were found to be p-type and the resistivity was only 0.9484×10^-4Ω cm. The optical band gap of the films is 1.508eV and the optical absorption coefficient is over 10⁴cm^-1.

• Periodical: Advanced Materials Research (Volumes 512-515)
• Pages: 39-42
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.512-515.39
• Online since: May 2012
• Authors: Bei Zhu, Cheng Jun Zhu, Shan Chang, Yong Wen Zhang, Chao Zheng Wang
• Keywords: CIAS Nanocrystals, Ciasse Thin Film, Ink Coating, Selenization, Solar Cell Materials

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