Equal Energy Driving Principle in Fabricating Poly-Si Thin Film

Yu Cang Wang; Rui Min Jin

doi:10.4028/www.scientific.net/AMR.512-515.55

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Formation of a Low Reflective Surface on Silicon Solar Cells by Chemical Treatment Using Ag-Assisted Electroless Etching
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Calculation and Analysis of Annual Total Solar Radiation in Complicated Topography
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Effect of Loading Rates on the Nominal Bonding Strength between Soft Substrate and Photovoltaic Silicon Wafer
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Equal Energy Driving Principle in Fabricating Poly-Si Thin Film
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A Simulation of PV Module and MPPT Control Based on Matlab/Simulink
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A New Structure of Tandem Solar Cell with Amorphous Silicon and Polysilicon
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An Inverter can be Used in Hybrid Wind-Solar Grid-Connected Power System
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 512-515Equal Energy Driving Principle in Fabricating...

Equal Energy Driving Principle in Fabricating Poly-Si Thin Film

Abstract:

In this article, we have explained quantum state observed in fabricating poly-silicon the thin film and calculated the crystallization procession of rapid thermal annealing as a function of light energy. Equal energy driving principle was presented, it is shown that the change in magnetic frequency leads to the conversion of magnetic field energy to annealing energy.

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Advanced Materials Research (Volumes 512-515)

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55-58

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https://doi.org/10.4028/www.scientific.net/AMR.512-515.55

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Online since:

May 2012

Authors:

Yu Cang Wang, Rui Min Jin

Keywords:

Equal Energy Driving Principle, Poly-Si Thin Film, Rapid Thermal Annealing (RTA)

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