Effects of Annealing Temperature on Crystallization Feature of BaSi2 Films

Zheng Tong Hao; Zi Yi Yang

doi:10.4028/www.scientific.net/AMR.532-533.149

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 532-533Effects of Annealing Temperature on...

Effects of Annealing Temperature on Crystallization Feature of BaSi₂ Films

Abstract:

The pure barium is used as target to deposit Ba films on p-Si(111) substrates by magnetron sputtering system, then the films as-deposited are subsequently annealed by annealing furnace with various temperature. The crystal structure, surface morphology and electricity property of the films annealed are characterized by X-ray diffraction, scanning electron microscope and Hall-effect instrument, respectively. The results show the annealing temperature favoring orthorhombic BaSi₂ film growth is about 800°C.

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Advanced Materials Research (Volumes 532-533)

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149-152

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.532-533.149

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Online since:

June 2012

Authors:

Zheng Tong Hao, Zi Yi Yang

Keywords:

BaSi₂ Film, Crystal Structure, Electricity Property, Surface Morphology

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