Temperature Dependent Characteristics of 1D Photonic Crystal with Defects

Hui Bo Wang; Kai Tong; Mei Ting Wang; Chao Cong Guo

doi:10.4028/www.scientific.net/AMR.535-537.1299

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 535-537Temperature Dependent Characteristics of 1D...

Temperature Dependent Characteristics of 1D Photonic Crystal with Defects

Abstract:

When the temperature is changed, due to the influence of the thermal expansion effect and thermo-optic effect, the thickness and refractive index of each layer of medium of photonic crystal will be Varied. As shown by optical resonators theory, the drift amount of the wavelength has a linear relationship with the variation of temperature. The electron beam lithography technology (EBL) and induction coupling plasma(ICP) etching were used for making the PCs with 1550nm central wavelength. An experiment mode is constructed for analyzing temperature characteristic of one-dimensional PCs, and then PCs is experimented at low temperature and high temperature. It can be found by experiment that, as the temperature changes, the central wavelength of photonic crystal has a linear relationship with the temperature, the drift amount of central wavelength at the low temperature is 0.072nm/°C,the drift amount at the high temperature is 0.076nm/°C,and the 3dB bandwidth of transmission spectrum of photonic crystal has no significant change, the spectral shape is changed very little.

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Periodical:

Advanced Materials Research (Volumes 535-537)

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1299-1303

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https://doi.org/10.4028/www.scientific.net/AMR.535-537.1299

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Online since:

June 2012

Authors:

Hui Bo Wang, Kai Tong, Mei Ting Wang, Chao Cong Guo

Keywords:

Defect Mode, Experiment Mode, Photonic Crystal (PC), Temperature Characteristic

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