Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

Maryam Amirhoseiny; Hassan Zainuriah; Sha Shiong Ng; Mohd Anas Ahmad

doi:10.4028/www.scientific.net/AMR.545.290

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Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

Abstract:

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10^-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.