A Study of the Structural and Electrical Characteristics of Thermally Oxidized Al-Doped Zn3N2 Film on Glass

L.Y. Low; Mat Johar Abdullah; N.H. Al-Hardan

doi:10.4028/www.scientific.net/AMR.545.294

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 545A Study of the Structural and Electrical...

A Study of the Structural and Electrical Characteristics of Thermally Oxidized Al-Doped Zn₃N₂ Film on Glass

Abstract:

We report the deposition of aluminium doped zinc nitride film (Al-Zn₃N₂) on glass substrates by RF sputtering. Thermal oxidation of the film under different annealing temperature (500°C to 600°C) was carried out. Structural and electrical properties of the annealed films were investigated. XRD analysis showed that Al-Zn₃N₂ film was successfully converted into Al-N zinc oxide (ANZO) at 500°C. I-V characteristics of the films were measured and the lowest estimated resistivity of the films of 4kΩ.cm can be achieved at 600°C.

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Periodical:

Advanced Materials Research (Volume 545)

Pages:

294-299

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.545.294

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Online since:

July 2012

Authors:

L.Y. Low, Mat Johar Abdullah, N.H. Al-Hardan

Keywords:

ANZO, RF Sputtering, Thermal Oxidation

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