Growth and Measurement of Mg Doped AlGaN/GaN Superlattice with Low Resistiviy

Jun Feng Chen

doi:10.4028/www.scientific.net/AMR.549.274

Paper Titles

Influence of Cellulase to Aggregation Structure of Bleached Softwood Pulp
p.255

Effect of Neutral Xylanase Pretreatment on ECF Bleaching of KP Bamboo Pulp with Low Kappa Number
p.260

Synthesis, Characterization of the Mn(II) Complex of Rutin and Interactions between the Complex and Serum Albumins
p.265

Synthesis of 5,10,15-Tris(4-nitrophenyl)-20-hydroxylphenylporphyrin and its Spectrum Study
p.269

Growth and Measurement of Mg Doped AlGaN/GaN Superlattice with Low Resistiviy
p.274

Adsorption Kinetics of Reactive Dyes on Silk with Octyl Butyl Dimethyl Ammonium Bromide as Accelerant
p.278

Structure, Acid Properties and Catalysis Performance of MCM-22 “Family” Zeolites on the Alkylation of Benzene with Propylene
p.283

Ionic Liquid-Catalyzed Synthesis of Diethylene Glycol
p.287

Solid-Solid Reaction Preparation for Nanoparticles of Bioinorganic Complex of Bismuth and Serine at Room Temperature
p.292

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 549Growth and Measurement of Mg Doped AlGaN/GaN...

Growth and Measurement of Mg Doped AlGaN/GaN Superlattice with Low Resistiviy

Abstract:

Although the research of bulk GaN material has take great progress in recent years, while the high quality of p-type GaN material still is an obstacle to fabricate the HBT and LD devices. In this paper we growth a group of Mg doped AlGaN/GaN superlattices under variant conditions. The Hall, AFM, PL and HR-XRD measurement are taken to find the relationship of sample quality with the superlattice structure, growth and annealing conditions. The results show that the period length of about 9nm and Al content of 30% is the optimal structure; the best annealing temperature under tmosphere is about 540°C to 580°C. At last the p-type AlGaN/GaN superlattice with resistivity of 0.31Ω•cm is fabricated which can be utilize for the contact layers of blue LEDs.

You might also be interested in these eBooks

Chemical Engineering and Material Properties II

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 549)

Pages:

274-277

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.549.274

Citation:

Cite this paper

Online since:

July 2012

Authors:

Jun Feng Chen

Keywords:

GaN, Measurement, p-Type, Resistivity, Superlattice

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] C. Ronning, E. P. Carlson, D. B. Thmoson, et al . Optical activation of Be implanted into GaN. Appl. Phys. Lett, 1998, 73: 1622-1624.

DOI: 10.1063/1.122225

Google Scholar

[2] S. Fisher, C. Wetzel, E.E. Haller, et al. On p-type doping in GaN-acceptor binding energies. Appl. Phys. Lett, 1995, 67: 1298-1300.

DOI: 10.1063/1.114403

Google Scholar

[3] Yamaguchi E, Junnarkar M R. Effects of nitrogen vacancy on optical properties of nitride semiconductors. J. Cryst. Growth, 1999, 189: 570-574.

DOI: 10.1016/s0022-0248(98)00202-4

Google Scholar

[4] E. F. Schubert, W. Grieshaber, I. D. Goepfert. Enhancement of deep acceptor activation in semiconductors by superlattice doping. Appl. Phys. Lett. 1996, 69. 3737-3739.

DOI: 10.1063/1.117206

Google Scholar

[5] D. Keith Bowen and Brian K. Tanner, High resolution X-ray Diffractometry and Topography, TAYLOR & FRANCIS, pp.127-136.

Google Scholar