Non-Volatile Memory Behaviour of MFIS Structure with Ba0.7Sr0.3TiO3 Films for Memory Capacitor Application

Htet Htet Nwe; Yin Maung Maung; Than Than Win; Ko Ko Kyaw Soe

doi:10.4028/www.scientific.net/AMR.557-559.1861

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 557-559Non-Volatile Memory Behaviour of MFIS Structure...

Non-Volatile Memory Behaviour of MFIS Structure with Ba_0.7Sr_0.3TiO₃ Films for Memory Capacitor Application

Abstract:

The growth of strontium doped barium titanate (BST) powder is performed by solid-state reaction. Microstructural characterization by SEM technique confirms the BST film is successfully formed on p-Si (100) substrate by spin coating technique. Dielectric properties of MFIS (Metal/ Ferroelectric/ Insulator/ Semiconductor) designs are measured by impedance analyzer (LCR meter, QuadTech :1730). P-E (polarization-electric field) hysteresis loops are also measured by applying the same triangular wave electric field in order to allow their application in NVFeRAM (Non-Volatile Ferroelectric Random Access Memory). The maximum remanent polarization density (P_r=38.6µC/cm²) is found at BST film 600°C. The film exhibits the potential to be a future promising memory. The results obtained from this research are quite interesting, acceptable, credible and applicable in use for NVFeRAM.

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Periodical:

Advanced Materials Research (Volumes 557-559)

Pages:

1861-1864

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.557-559.1861

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Online since:

July 2012

Authors:

Htet Htet Nwe, Yin Maung Maung, Than Than Win, Ko Ko Kyaw Soe

Keywords:

Barium Strontium Titanate, Dielectric, MFIS, P-E Hysteresis Loop

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