Influence of Al Concentration on Performance of Cu (In,Al)Se₂ (CIAS) Films

Abstract:

Cu(In,Al)Se₂ (CIAS) thin films with different Al contents were prepared by dc magnetron sputtering method and selenization process. At first, CuInAl (CIA) precursor films were deposited by sputtering from copper target and indium-aluminum composite targets, then followed by selenization process. The morphology, microstructure, optical and electrical properties were investigated by scanning electron microscopy, energy dispersive analysis, X-ray diffraction, four probes method and optical transmission, respectively. Variation of structural, optical and electrical properties of CIAS films with different Al contents was studied. The results show that Al content has an effect on the morphology and grain distribution. All the CIAS films maintain chalcopyrite structure with preferred orientation along (112) direction. The electrical studies show that resistivity of the films increases when the Al content increases. The optical studies reveal that the films have high absorbance and the energy band gap calculated from transmission spectra are at the rang of 1.60-1.95 eV.

• Periodical: Advanced Materials Research (Volumes 557-559)
• Pages: 1879-1883
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.557-559.1879
• Online since: July 2012
• Authors: Li Mei Zhou*, Su Mei Wu, Jin Ping Yu
• Keywords: CIAS, Magnetron Sputtering, Optical and Electrical Properties, Solar Cell

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