The Oxidation of Co-5Si Alloys in 1 atm of Pure O₂ at 700 and 800°C

Abstract:

The kinetics and products of oxidation of binary Co-5Si alloys in 1 atm of pure O2 at 700 and 800 oC were investigated. Co-5Si alloys followed a parabolic behavior to a good approximation (n=2). The parabolic rate constants as functions of temperature were 2.789×10-11, 2.240×10-10 g2cm-4s-1 at 700 and 800 oC, respectively. The scales formed on Co-5Si alloys were double-layered, with formation of an outer layer of columnar CoO and an inner region containing a mixture of SiO2 and CoO, coupled to the internal oxidation region of Si.

• Periodical: Advanced Materials Research (Volumes 560-561)
• Pages: 1064-1067
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.560-561.1064
• Online since: August 2012
• Authors: Hong Hua Zhang, Jun Huai Xiang, Hai Ying Sun, Yi Li
• Keywords: Co-5Si, High-Temperature, Isothermal Oxidation, Microstructure

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