InGaAs Nanoflowers Grown by MOCVD

Abstract:

InGaAs nanoflowers have been prepared on InP substrates by MOCVD, using TMIn, TMGa and AsH3 as reactive precursors at 420 oC. Through observation by scanning electron microscopy, we find that InGaAs nanoflowers are composed with blades and rods. The flower patterns are controlled by the growth temperature. The nanoflowers of InGaAs are disappeared, when we alter the growth temperature up and down. The InGaAs nanoflowers are In0.98Ga0.02As.

• Periodical: Advanced Materials Research (Volumes 560-561)
• Pages: 747-750
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.560-561.747
• Online since: August 2012
• Authors: Tie Min Zhang, Guo Qing Miao, Jun Fu, Dong Mei Ban, Zhen Jiang Shen, Hong Lin, Xu Zou, Hong Yan Peng
• Keywords: InGaAs, MOCVD, Nanostructure

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