The Study of SiC Substrate MgB2 thick Films Growing along C Axis

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We have fabricated MgB2 thick films on SiC substrates growing along c axis by using hybrid physical–chemical vapor deposition (HPCVD) technique. The thickness was 8μm. Electric measurement showed that the Tc (onset) was 41.4K, and the transition width was 0.5K, the residual resistance ratio (RRR) was near 7. Magnetic measurement showed that the critical current density was 1.7×106A/cm2 at 5K in a self field.

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Edited by:

Tony Sun

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153-157

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Y. B. Wang et al., "The Study of SiC Substrate MgB2 thick Films Growing along C Axis", Advanced Materials Research, Vol. 567, pp. 153-157, 2012

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September 2012

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