The Study of Microstructure and Electric Resistivity of SiC Thin Films Produced by MF Magnetron Sputtering

Yang Yang Li; Jun Jie Hao; Xiao Jia Wang; Rui Xin Wang; Zhi Meng Guo

doi:10.4028/www.scientific.net/AMR.567.158

Paper Titles

Shape Memory Characteristics of NiTi Alloy Wire under Various Constrained Stresses
p.135

Simulation of Casting Process for Ductile Iron Wind Generator Rotor Shaft
p.141

Study on Automobile Body Performance of Honeycomb Sandwich Composite Material
p.146

The Study of SiC Substrate MgB₂thick Films Growing along C Axis
p.153

The Study of Microstructure and Electric Resistivity of SiC Thin Films Produced by MF Magnetron Sputtering
p.158

Effects of Additives on Semiconduction Transformation in Lead Zirconate Titanate Ceramic Induced by Atomic Hydrogen
p.162

A Method for Predicting the Onset and Expanding of the Damage during CFRP Interference-Fit Joining Process
p.166

Hysteretic Behavior of Steel Members Strengthened with CFRP under Cyclic Lateral Loading in Different Temperature
p.170

Superabsorbent Hydrogel from Sago Starch: The Effects of Crosslinking Agent on Thermal Stability and FTIR Analysis
p.174

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 567The Study of Microstructure and Electric...

The Study of Microstructure and Electric Resistivity of SiC Thin Films Produced by MF Magnetron Sputtering

Abstract:

SiC films were prepared by mid-frequency (MF) magnetron sputtering with two targets (SiC and C) on monocrystalline Si(100) and Al₂O₃ substrates. During the study, different annealing temperatures and working pressures were set. The surface morphology of SiC films was studied by SEM, while structure was characterized using a conventional X-ray diffractometer. SEM images had shown the surface morphology of SiC films was related to substrates. It was also found that working pressure had a big influence on the structure of SiC films through the XRD patterns. The film was mainly based on 3C-SiC when working pressure wass 0.3Pa, and 4H-SiC when 0.6 Pa. Another conclusion was that the resistivity of 4H-SiC was larger than that of 3C-SiC.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 567)

Pages:

158-161

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.567.158

Citation:

Cite this paper

Online since:

September 2012

Authors:

Yang Yang Li, Jun Jie Hao, Xiao Jia Wang, Rui Xin Wang, Zhi Meng Guo

Keywords:

Annealing Temperature, Electric Resistivity, Mf Magnetron Sputtering, SiC Film, Working Pressure

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] L.S. Ramsdel, J.A. John, in: Three new polymorph of silicon carbide 8H, 75R and 84R, Acta Crystallography Vol. 4 (1951), p.75.

Google Scholar

[2] W.J. Choyke, G. Pensl, in: Physical properties of SiC, MRS Bulletin (1997), p.25–29.

Google Scholar

[3] Z.D. Sha, X.M. Wu, L.J. Zhuge, in: Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique. Vacuum, Vol. 79(2005), pp.250-254.

DOI: 10.1016/j.vacuum.2005.04.003

Google Scholar

[4] W. Yao, Y.M. Zhang, J.C. Han, H.B. Zuo, in: Fabrication and test of reaction bond silicon carbide for optical applications. Trans Nonferrous Met SOC China Vol. 16(2006),. pp.409-413.

DOI: 10.1016/s1003-6326(06)60070-8

Google Scholar

[5] S. Kerdiles, R. Rizk, A. Pérez-Rodrı́guez, B. Garrido, O. González-Varona, L. Calvo-Barrio, J.R. Morante, in: Magnetron sputtering synthesis of silicon-carbon ﬁlms: structural and optical characterization, Solid-State Electronics Vol. 42 (1998).

DOI: 10.1016/s0038-1101(98)00232-9

Google Scholar

[6] H. ElGazzar, E. Abdel-Rahman, H.G. Salem, F. Nassar: Applied Surface Science Vol. 256 (2010), p.2056-(2060).

DOI: 10.1016/j.apsusc.2009.09.047

Google Scholar

[7] J. Yi, X.D. He, Y. Sun, L. Yao: Appl. Surf. Sci. Forum Vol. 253 (2007), pp.4361-4366. In Chinese.

Google Scholar