The Electric Field Tuning Characteristics in the Strain-Mediated Ferrite-Piezoelectric Laminated Magnetoelectric Microwave Devices

Abstract:

This research focused on the numerical simulation of electric field tuning characteristics of the magnetoelectric microwave devices with the core of the laminated ferrite-piezoelectric magnetoelectric materials. Firstly, we proposed an expression for the shift of ferromagnetic resonance (FMR) frequency tuning by external electric field in piezoelectric layer, then substituted the expression of magnetoelectic (ME) constant into this expression, which can convert the electric field tuning on the laminated magnetoelectric materials into the equivalent magnetic field tuning on the ferrite layer. Secondly, we built a numerical analysis model for tunable magnetoelectric microwave device which is formed by the laminated magnetoelectric material and microstrip line, and put the equivalent magnetic field into this numerical model, then the numerical analysis model of novel tunable magentoelectric microwave device is completed. Taking a tunable ME microwave resonator for example, the S parameters calculated by the numerical model in this paper are in good agreement with experimental results both qualitatively and quantitatively. Considering the demand for the designing and applying of the microwave devices, we studied the effect of geometrical dimensions of the ferrite layer (YIG/GGG) on the return loss and the resonance frequency.

• Periodical: Advanced Materials Research (Volume 571)
• Pages: 569-573
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.571.569
• Online since: September 2012
• Authors: Hao Miao Zhou, Fang Li, Juan Hu Deng, Jing Wei
• Keywords: Ferrite-Piezoelectric Layered Composite, Ferromagnetic Resonance (FMR), Tunable Microwave Resonator

References

[1] W. Eerenstein, N. D. Mathur, J. F. Scott, NAT, 442(17): 759 (2006).

[2] A. A. Semenov, S. F. Karmanenko et al, Electron. Lett, 42, 11 (2006).

[3] A. S. Tatarenko, V. Gheevarughese et al. Electron. Lett, 42, 9 (2006).

[4] A. S. Tatarenko, G. Srinivasan and M. I. Bichurin, Appl. Phys. Lett. 88, 183507 (2006).

[5] M. I. Bichurin, I. A. Kornev, V. M. Petrov, A. S. Tatarenko, Yu. V. Kiliba, G. Srinivasan, Phys. Rev. B, 64: 094409 (2001).

[6] M. I. Bichurin, V. M. Petrov, S. V. Averkin, E. Liverts, J. Appl. Phys. 107: 053905 (2010).

[7] Carl Pettiford, Saumitro Dasgupta, Jin Lou, Soack D. Yoon, N. X. Sun, IEEE T MAGN, 43(7): 3343 (2007).

[8] Gopalan Srinivasan, A. S. Tatarenko et al. Mater. Res. Soc. Symp. Proc. 0966-T14-01 (2007).

[9] A. S. Tarenko, V. Gheevarughese et al. J Electroceram. DOI 10. 1007/s10832-007-9382-1 (2007).

[10] Y. K. Fetisov and G. Srinivasan, Appl. Phys. Lett. 93, 033508 (2008).