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Dielectric and Conductivity Study of SrBi2Ta2O9 Ceramic by Microwave Sintering Technique

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Abstract:

Bismuth layered structure SrBi2Ta2O9 ceramic is prepared by the microwave sintering technique via solid state route at 1100°C. X-ray diffraction analysis is used to analyze the phase purity and identifies the orthorhombic phase with A21am space group. The fracture surface morphology of the sintered pellet is visualized by scanning electron microscopy. Diffusive phase transition behavior is existed in the temperature dependence dielectric study at Tc = 305°C. The electrical ac and dc conductivity study shows the negative temperature coefficient of resistance behavior. Activation energy from the Arrhenius plot is studied to discuss the fatigue property.

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Periodical:

Advanced Materials Research (Volume 584)

Pages:

169-172

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.584.169

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Online since:

October 2012

Authors:

Venkatesan Senthil, Tanmaya Badapanda, Simanchalo Panigrahi

Keywords:

Bismuth Layered Structure, Conductivity Study, Dielectric, Microwave Sintering

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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