Fabrication and Characterization of ZnO Nanowires by Thermal Oxidation Method

Article Preview

Abstract:

Fabrication of ZnO nanowires (NWs) by thermal oxidation method has been studied in this work. The ZnO NWs have been grown by oxidation of Zn metal foil under oxygen environment for two typical oxidation durations. We have investigated the behavior of the as-grown ZnO NWs with the change in oxidation duration at particular temperature. The changes in surface morphology and chemical composition with the variation of oxidation duration have been analyzed by scanning electron microscope (SEM) and energy dispersive spectroscopy (EDS) respectively. From EDS spectra, it is confirmed that Zn metal has completely oxidized into ZnO for higher oxidation duration. In this work, the optimized duration of oxidation for growth of ZnO NWs is found to be ~60 minutes at particular temperature of 600oC. The present method provides a possible mechanism for the growth of ZnO NWs on the p-Si substrates.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

124-128

Citation:

Online since:

November 2012

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2012 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] M. R. Khanlary, V. Vahedi and A. Reyhani, Synthesis and characterization of ZnO nanowires by thermal oxidation of Zn thin Films at various temperatures, Molecules 17 (2012) 5021-5029.

DOI: 10.3390/molecules17055021

Google Scholar

[2] K. Lee, M. S. Kim and J. S. Yu, Effect of AZO seed layer on electrochemical growth and optical properties of ZnO nanorod arrays on ITO glass, Nanotechnology 22 (2011) 445602.

DOI: 10.1088/0957-4484/22/44/445602

Google Scholar

[3] J. Song and S. Lim, Effect of seed layer on the growth of ZnO nanorods, J. Phys. Chem. C 111 (2007) 596-600.

Google Scholar

[4] W. J Shen, J. Wang, Q. Y. Wang, Y. Duan and Y. P. Zeng, Structural and optical properties of Zn films on Si substrates using a γ-Al2O3 buffer layer, J. Phys. D: Appl. Phys. 39 (2006) 269–273.

DOI: 10.1088/0022-3727/39/2/006

Google Scholar

[5] X. N. Wang, Y. Wang, Z. X. Mei, J. Dong, Z. Q. Zeng, H. T. Yuan, T. C. Zhang, X. L. Dua, J. F. Jia, Q. K. Xueb, X. N. Zhang, Z. Zhang, Z. F. Li and W. Lu, Low-temperature interface engineering for high-quality ZnO epitaxy on Si (111) substrate, Appl. Phys. Lett. 90 (2007) 151912.

DOI: 10.1063/1.2722225

Google Scholar

[6] H. Sun, M. Luo, W. Weng, K. Cheng, P. Du, G. Shen and G. Han, Room-temperature preparation of ZnO nanosheets grown on Si substrates by a seed-layer assisted solution route, Nanotechnology 19 (2008) 125603.

DOI: 10.1088/0957-4484/19/12/125603

Google Scholar

[7] Y. Fang, Y. Wang, Y. Wan, Z. Wang, and J. Sha, Detailed study on photoluminescence property and growth mechanism of ZnO nanowire arrays grown by thermal evaporation, J. Phys. Chem. C 114 (2010) 12469–12476.

DOI: 10.1021/jp103711m

Google Scholar