The Effects of Strong Oxidizing Slurry and Processing Atmosphere on Double-Sided CMP of SiC Wafer

Abstract:

In order to achieve high removal rate and high-quality processing on SiC wafer, we carried out the CMP processing experiment with the new type CMP machine (Bell-jar) by using the slurry with the addition of strong oxidant (KMnO₄). It was found that the high speed CMP processing was achieved by controlling the concentration of KMnO₄ in the slurry, the pH of slurry and the processing atmosphere. By using the slurry with the addition of KMnO₄ of 0.1mol/L, the removal rate was the fastest up to 1019nm/h in the fixed pH of 6. By use of the slurry of pH 3, the removal rate of C-face of SiC wafer was 1695nm/h On the other hand, the fastest removal rate of Si-face of SiC wafer was only 51nm/h by using the slurry whose pH is 7. In the open air atmosphere, the removal rate was 915nm/h, which was higher than that at the higher and lower atmospheric pressure.

• Periodical: Advanced Materials Research (Volumes 591-593)
• Pages: 1131-1134
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.591-593.1131
• Online since: November 2012
• Authors: Tao Yin, Toshiro Doi, Syuhei Kurokawa, Osamu Ohnishi, Tsutomu Yamazaki, Zhi Da Wang, Zhe Tan
• Keywords: C-Face, CMP, KMnO₄, Processing Atmosphere, Removal Rate, Si-Face, Silicon Carbide (SiC), Simultaneous Double-Sided Polishing

References

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