Investigation of Co-Sputtered Amorphous NbxSi1−x Films Properties for Junction Barrier

Wen Hui Cao; Jin Jin Li; Qing Zhong; Xiao Wei Guo; Qing He; Zong Tao Chi

doi:10.4028/www.scientific.net/AMR.602-604.1431

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 602-604Investigation of Co-Sputtered Amorphous NbxSi1−x...

Investigation of Co-Sputtered Amorphous Nb_xSi_1−x Films Properties for Junction Barrier

Abstract:

In this paper we report the preparation and characterization of the NbxSi1−x films which would be used as Josephson junction barrier layer. The compositional dependence of dc magnetron co-sputtered NbxSi1−x films on sputtering power is analyzed using Energy Dispersive Spectrometer (EDS) and X-ray Photoelectron Spectrometer (XPS) respectively. The corresponding resistivity measurements of NbxSi1−x films indicate that the film resistivity could be controlled from 0.28 to about 1.29 mΩ·cm which is useful for resistance adjustment of Josephson junction barrier layer. The surface morphology of the NbxSi1−x films is studied by atomic force microscope (AFM) and scanning electron microscope (SEM).

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Advanced Materials Research (Volumes 602-604)

Pages:

1431-1436

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.602-604.1431

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Online since:

December 2012

Authors:

Wen Hui Cao, Jin Jin Li, Qing Zhong, Xiao Wei Guo, Qing He, Zong Tao Chi

Keywords:

Film, Josephson Junction Barrier, Nb_xSi_1-x

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