Influence of Laser-Conditioning on Laser-Induced Damage Properties of ZnSe Thin Films

Feng Zou; Jun Qi Xun; Jun Hong Su; Jian Bo Ma

doi:10.4028/www.scientific.net/AMR.602-604.1437

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 602-604Influence of Laser-Conditioning on Laser-Induced...

Influence of Laser-Conditioning on Laser-Induced Damage Properties of ZnSe Thin Films

Abstract:

With the development of high power laser systems, laser protection of optical components becomes more and more important. In order to enhance the laser-induced damage capability of optical films components, besides advanced methods and processes, post-treatment has significant influence on the laser-induced damage threshold (LIDT) of thin films. Q switch Nd:YAG laser of the working wave length at 1064nm, was used to post process on ZnSe single layer films with thickness of /2 (=1064nm) deposited by thermal evaporation, and the laser-induced damage and optical properties were investigated. By changing the energy density and pulse number under the spot size remained a fixed value, their effects on thin films damage threshold were studied respectively, the optimal processing parameters were obtained: energy density is 3.0 J/cm2 and pulse number is 1.The LIDT of post processed ZnSe films was improved from 5.0J/cm2 to 8.2J/cm2.

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Periodical:

Advanced Materials Research (Volumes 602-604)

Pages:

1437-1443

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.602-604.1437

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Online since:

December 2012

Authors:

Feng Zou*, Jun Qi Xun, Jun Hong Su, Jian Bo Ma

Keywords:

Laser-Conditioning, Laser-Induced Damage Threshold, Thin Film, ZnSe

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