Simulation of the Growth, Structure and Crystallization of the Amorphous Silicon Thin Film

Abstract:

In this paper, using classical molecular dynamics, the growth of the amorphous silicon thin film deposited on the single crystal silicon is simulated and studied by Stillinger-Weber potential. The radial distribution functions of particles are calculated and the Voronoi diagrams of the films are given. The regular and irregular structures in the film are analyzed and the part crystallization condition is discussed. It is found that the features of the film are related with the ratio of the substrate temperature and the temperature of the incident atoms. The density of the deposited silicon film is obtained. The value of the density is about 2.2515g/cm³ which is consistent with the experiment data.

• Periodical: Advanced Materials Research (Volumes 602-604)
• Pages: 1457-1460
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.602-604.1457
• Online since: December 2012
• Authors: Shi Wei Ren, Jing Wei Sun, Yan Zhong Hao
• Keywords: Crystallization, Molecular Dynamic (MD), Radial Distribution Function, Voronoi Diagram

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