Effect of Annealing Temperature on Structural and Electrical Properties of Bismuth Ferrite Thin Film

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Abstract:

The BiFeO3 thin film was prepared by sol-gel process on Pt/Si substrates. The dependences of structural, electrical properties on annealed temperature were studied. X-ray diffraction (XRD) analysis revealed that the pure phase of BiFeO3 thin film was obtained when annealed below 650°C for 60 minutes in air. The film annealed at lower temperature had denser surface morphology, and showed better electrical characteristic.

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Advanced Materials Research (Volumes 602-604)

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1474-1478

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December 2012

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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